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CHV2270
Fully Integrated Ku-band HBT VCO Low cost / High linearity
GaAs Monolithic Microwave IC Description
The CHV2270 is a multifunction for frequency generation. It integrates a C-band balanced voltage controlled oscillator providing a Kuband output (2nd harmonic), with different modulation slopes control and other functions like linearity improvement device making it suitable for radar modulations. It also includes a dual rank prescaler, an adjustable medium power amplifier and a temperature sensor. The VCO is fully integrated on HBT process. On chip base-collector diodes are used as varactors. All the active devices are internally self biased to ease bias configuration. This chip is compatible with automatic equipment for assembly. The circuit is manufactured on HBT process 2m emitter length, via holes through the substrate and high Q passive elements. It is available in chip form.
Vmt Vft Vct SETN GLIN +V SETHP
6.375GHz
RF_OUT
x2
12.75GHz
/N
VCO HBT
PresN_OUT
Vtemp
VCO multifunction block diagram
Main Features
-40 to +125 temperature range C C Low temperature dependence Fully integrated VCO architecture Prescaler by up to F_out/128 Low phase noise Low cost / high linearity oriented Adjustable output power Temperature sensor Very simple bias configuration Low DC power consumption Automatic assembly oriented SiNx layer protection Chip size: 1.38 x 2.05 x 0.1mm Typical VCO F_out(Vct) tuning (GHz)
12,8
12,75 F_out (GHz)
12,7
12,65
12,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5
Typical free running VCO F_out(Vmt) tuning
Main Characteristics
Tamb = +25 C
Symbol
F_out PN Pout
Parameter
Specified output frequency range Phase noise @ F_out and 100kHz offset Output power
Min
12.65
Typ
12.75 -100 5 or 14
Max
12.85
Unit
GHz dBc/Hz dBm
Ref.: DSCHV22707117 -27 Apr 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2270
Electrical Characteristics
Full temperature range
Ku-band HBT VCO
Symbol
Parameter (1)
Min
Typ
12.75 5 (2) 1.5:1 0.75 250 2
Max
12.85 8 2.5:1
Unit
GHz dBm
RF_OUT frequency for guaranteed F_out 12.65 specifications Output power at RF_OUT port on load P_out 1 VSWR 1.5:1 (2) VSWR_out RF_OUT port VSWR on 50 load P_out linearity over 200MHz within P_out_Lin F_out range Maximum variation of F_out over F_tune(T) temperature Vct_F_tune Coarse tuning total frequency range 0.5 Fine tuning frequency range with Vft_F_tune 3 guaranteed specifications Medium tuning frequency range with Vmt_F_tune guaranteed specifications Vct_V_tune Coarse tuning voltage range 0.5 - 4.3 Vft_V_tune Fine tuning voltage range 2-4 Vmt_V_tune Medium tuning voltage range Vct_I Coarse tuning port current Vft_I Fine tuning port current Vmt_I Medium tuning port current Vct_F_slope Coarse tuning frequency slope 200 Fine tuning frequency slope within Vft_F_slope -10 Vft_F_tune (3) Maximum variation of Vft_F_slope over 0 Vft_F_slope(T) Top range [+30 C;+110 (3) C] Medium tuning frequency slope within Vmt_F_slope -40 Vmt_F_tune Maximum variation of Vmt_F_slope 0 Vmt_F_slope(T) over Top range [+30 C;+110 (4) C] Fine tuning linearity over 200kHz within Vft_Lin -5 Vft_F_tune (3) Medium tuning linearity over 33MHz Vmt_Lin1 within Vmt_F_tune (3) Medium tuning frequency range with Vmt_Lin2 +/-1% linearity within Vmt_F_tune Fine tuning modulation 3dB cutoff frequency within Vft_F_tune Vft_Mod3dB 5 @ d(Vct_V)/dt=0 Medium tuning modulation 3dB cutoff frequency within Vmt_F_tune Vmt_Mod3dB 10 @ d(Vct_V)/dt=0 Frequency pulling versus RF_OUT port P_VSWR load @ VSWR = 2.5:1 (2) Frequency pushing versus supply P_V+ 0 voltage F_out Phase noise @ 10kHz PN @ 100kHz @ 1MHz Amplitude noise (SSB) @ 10kHz AN @ 100kHz @ 1MHz
Ref.: DSCHV22707117 -27 Apr 07 2/8
dBpp 500 MHz GHz MHz
70 0.5 - 4.5 0 - 4.5 0 - 4.5 0.5 0.5 3 700 -2.5 +/-10 -20 -10 -20 <0.05 +/-1 (3) 33 +5
MHz V V V mA mA mA MHz/V MHz/V % MHz/V % % % MHz MHz
1.5 375 -5
20 0.25 35 -75 -100 -123 -145 -156 -167 70 -65 -90 -113 -135 -146 -157
MHz MHz pp MHz/V dBc/Hz
dBc
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Ku-band HBT VCO
Hn_Rej Pres_Rej Pres_N Pres_F Pres_P Pres_L Pres64_PN RF_OUT VCO harmonics rejection RF_OUT prescaler spurious rejection Prescaler rank Prescaler PRESN ports output frequency Output power on PRESN ports PRESN ports load Prescaler rank 64 phase noise: @ 10kHz @ 100kHz @ 1MHz Temperature sensor port voltage @ +25 C Temperature sensor port voltage slope over Top Temperature sensor port load Positive supply voltage (Pads (VD1 xor VD2) and (VA1 xor VA2)) Positive supply current (Pads (VD1 xor VD2) and (VA1 xor VA2)) (2&5) Operating temperature range 10 45
CHV2270
20 65 N=4 or 64 F_out/(2*Pres_N) -3 0 100 -117 -142 -165 1.15 -1.2 47k +4.4 +4.5 150 -40 25 +4.6 210 +125 1.35 -1 -107 -130 -150 1.55 -0.8 dBc dBc GHz dBm dBc/Hz
Vtemp_V Vtemp_S Vtemp_L +V +I Top
V mV/ C V mA C
Symbol
Parameter (1)
Min
Typ
Max
Unit
(1) IMPORTANT: Fine and medium tuning port must not be used together. Fine or medium tuning port specifications are guaranteed when respectively medium or fine tuning port is high impedance. (2) In low power mode. See "VCO setting matrix" for 14dBm P_out (+I increase < 80mA in high power mode). (3) Pad "GLIN" set to "open". (4) Pad "GLIN" set to "GND". (5) SET4 set to "GND" and SET64 set to "OPEN" (+I increase < 20mA when N=64).
Ref. : DSCHV22707117 -27 Apr 07
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2270
Absolute Maximum Ratings (1)
Symbol
+V VTx +I Tstg
Ku-band HBT VCO
Parameter
Positive supply ports voltage Tuning ports voltage Positive supply current (N=4 & low power) Storage temperature range
Values
+5 0 to +5 250 -55 to +150
Unit
V V mA C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
CAUTION: ESD Protections: Electrostatic discharge sensitive device, observe handling and assembly precautions !
VCO Setting Matrix
Sufficient conditions Symbol
P_out
Parameter
Output power at RF_OUT port on load VSWR 1.5:1
Setting Pad
SETHP SET4 SET64 SET4 SET64 SET4 SET64 GLIN
Setting
Open V0 to +V +V DC GND (2) Open Open DC GND (2) Open Open Open DC GND
Typical Value
5 dBm 5 to 14 dBm 14 dBm 0 dBm Non Active 0 dBm Non Active +/-1% +/-0.33%
Pres4_P Output power on PRES4 port Pres64_ P
Output power on PRES64 port
Medium tuning linearity over 33MHz Vmt_Lin1 within Vmt_F_tune
(2) See "Typical Assembly and Bias Configuration" for recommendations.
Ref.: DSCHV22707117 -27 Apr 07
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Ku-band HBT VCO
Chip Mechanical Data and Pin References
5 82 355 655 6 7 8 1105 9
CHV2270
1898
10 1740 11 12
4 1290
1440 390 82 655 1228 1
13
3
14 15 240
2
Origin 0,0 Layout 1310x1980
Unit = m External chip size (layout size + dicing streets) = 1380 x 2050 35 Chip thickness = 100 +/- 10 RF Pads (1, 5) = 75 x 100 (SiNx opening larger in the bonding axis) DC/IF Pads = 75 x 100 (SiNx opening larger in the bonding axis) SiNx layer protection thickness = 0.2
Pin number
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Pin name
RF SETHP VA1 VD1 VD2 PRES4 SET4 SET64 PRES64 GLIN VTF VTM VTC VA2 VTEMP
Description
RF output port RF power option setting port Positive supply voltage port (intra-connected to VA2) Positive supply voltage port (intra-connected to VD2) Positive supply voltage port (intra-connected to VD1) Prescaler rank 4 output port Prescaler rank 4 option setting port Prescaler rank 64 option setting port Prescaler rank 64 output port VTM linearity option setting port RF Frequency fine tuning port RF Frequency medium tuning port RF Frequency coarse tuning port Positive supply voltage port (intra-connected to VA1) Temperature sensor output port
Ref. : DSCHV22707117 -27 Apr 07
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2270
Typical Assembly and Bias Configuration
Prescaler line
>= 47pF
Ku-band HBT VCO
GND
>= 47pF
DC line +V
>= 47pF
>= 47pF
L_out
-strip line
This drawing shows an example of assembly and bias configuration. All the transistors are internally self-biased. Some external chip capacitors of at least 47pF are necessary for the positive supply voltage. Pads to be power supplied are (VD1 xor VD2) and (VA1 xor VA2). Prescaler outputs PRES4 and PRES64 must be AC coupled through an external serial capacitor taking into account output frequency and internal impedance of 100 (Typically >120pF). SET4 and SET64 longer bonding length to DC ground than 10mm must be compensated by intermediate decoupling capacitor (Typically >120pF). Setting is done by DC load only. For the RF pad the equivalent wire bonding inductance (diameter=25m) have to be according to the following recommendation:
Pin name
RF
Equivalent inductance
L_out < 0.3 nH
Wire length (1)
< 0.4 mm
(1) This value is the total length including the necessary loop from pad to pad. Chip backside must be RF grounded.
Ref.: DSCHV22707117 -27 Apr 07
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Ku-band HBT VCO
CHV2270
Ref. : DSCHV22707117 -27 Apr 07
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2270
Ku-band HBT VCO
Ordering Information
Chip form : CHV2270-98F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref.: DSCHV22707117 -27 Apr 07
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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